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설명
유통업체에서 제공한 Semikron SKM75GB12T4에 대한 설명입니다.
Trans IGBT Module N-CH 1200V 115A 7-Pin Case GB
IGBT MODULE, DUAL N CH, 1.2KV, 115A; Transistor Polarity: Dual N Channel; DC Collector Current: 115A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.2kV; Tr
IGBT, HALF BRIDGE, 1.2KV, 115A, MODULE; Continuous Collector Current:115A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
IGBT module Connection: 3 x M5 Fastening: 2 x M6 Configuration: Half-Bridge Housing type: SEMITRANS 2 Collector-emitter saturation voltage: 1.85 V Collector-emitter voltage: 1.2 kV Energy dissipation during make-time: 11 mJ Energy dissipation during turn-off time: 6.9 mJ
Features: IGBT4 = 4. Generation (Trench)IGBT V CEsat with positive temperaturecoefficient High short circuit capability, selflimiting to 6 x I CNOM Soft switching 4. Generation CALdiode (CAL4) UL recognized, file no. E63532 Typical Applications: AC inverter drives UPS Electronic welders
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- SEMIK
- SEMIKRON INTERNATIONAL
- SEMIKRO
- SEMIKRON INC
- semokron
- SEMIKR
- SEMIKON
- SEMIKROM
- SMIKRON
- SEMIKRON DANFOSS
- SEMIKRON INTERNATIONAL GMBH
- SEMIKEON
- Semikron Sindopower
- Sindopower / Semikron
- Semikron Danfoss Elektronik
- semicron
- SMK
- SMK CORP
- Semikron Passive
- SEMIKRON/PRIMO
- Mikron Manufacturing
기술 사양
Physical
Case/PackageModule
MountPanel, Screw
Number of Pins7
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage1.85 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationDual
Max Collector Current115 A
Max Operating Temperature175 °C
Min Operating Temperature-40 °C
Dimensions
Height30.1 mm
Length94 mm
Width34 mm