IGBT MODULE, 1200V, 6 PACK; Transistor Polarity:N Channel; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:1.05kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Ca
Features: Compact design One screw mounting Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) Ultrafast NPT technology IGBT CAL technology FWD Integrated NTC temperature sensor Typical Applications: Inverter