Semikron SK20DGDL065ET
$ 155.95
설명
유통업체에서 제공한 Semikron SK20DGDL065ET에 대한 설명입니다.
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
Features: Compact design One screw mounting Heat transfer and isolation through direct copper bonded alumium oxide ceramic (DCB) Ultrafast NPT technology IGBT CAL Technology FWD Integrated NTC temperature sensor Typical Applications: Inverter
IGBT module Connection: Soldering pins Fastening: 1 x M4 Configuration: 3-phasig Housing type: SEMITOP 3 Collector-emitter saturation voltage: 2 V Collector-emitter voltage: 600 V Energy dissipation during make-time: 0.69 mJ Energy dissipation during turn-off time: 0.39 mJ
CIB MODULE, 600V, 3 PHASE; Transistor type:3-Ph Rectifier + Brake Chopper + Invertor; Voltage, Vces:600V; Current, Ic continuous a max:24A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm pulsed:48A; Time, rise:28ns; Voltage, Vce sat typ:2.2V; Voltage, Vceo:600V
Igbt Module, Six, 600V, 24A; Dc Collector Current:24A; Collector Emitter Saturation Voltage Vce(On):2.5V; Power Dissipation Pd:-; Junction Temperature, Tj Max:150°C; Igbt Termination:Press Fit; Collector Emitter Voltage V(Br)Ceo:600Vrohs Compliant: Yes |Semikron SK 20 DGDL 065 ET
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