설명
유통업체에서 제공한 Semikron SK15DGDL126ET에 대한 설명입니다.
POWER IGBT TRANSISTOR
IGBT module Connection: Soldering pins Fastening: 1 x M4 Configuration: 3-phasig Housing type: SEMITOP 3 Collector-emitter saturation voltage: 1.7 V Energy dissipation during make-time: 2 mJ Energy dissipation during turn-off time: 1.8 mJ
Features: Compact design One screw mounting Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) Ultrafast NPT technology IGBT CAL technology FWD Integrated NTC temperature sensor Typical Applications: Inverter
Igbt Module, Six, 1.2Kv, 15A; Continuous Collector Current:22A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SK 15 DGDL 126 ET
CIB MODULE, 1200V, 3 PHASE; Transistor Type:3-Phase Bridge Rectifier + Brake Chopper + 3 Phase Bridge Inverter; Voltage, Vces:1200V; Current Ic Continuous a Max:22A; Voltage, Vce Sat Max:2.1V; Case Style:SEMITOP 3; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:44A; Time, Rise:25ns; Voltage, Vce Sat Typ:1.7V
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- SEMIK
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- Sindopower / Semikron
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- semicron
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- SMK CORP
- Semikron Passive
- SEMIKRON/PRIMO
- Mikron Manufacturing