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IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
설명
유통업체에서 제공한 Semikron SEMIX302GB12E4S에 대한 설명입니다.
Trans IGBT Module N-CH 1200V 463A 7-Pin Case GB
Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient High short circuit capability UL recognized, file no. E63532 Typical Applications: AC inverter drives UPS Electronic Welding
Igbt Module, Dual, 1.2Kv, 463A; Continuous Collector Current:463A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX302GB12E4S
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- SEMIK
- SEMIKRON INTERNATIONAL
- SEMIKRO
- SEMIKRON INC
- semokron
- SEMIKR
- SEMIKON
- SEMIKROM
- SMIKRON
- SEMIKRON DANFOSS
- SEMIKRON INTERNATIONAL GMBH
- SEMIKEON
- Semikron Sindopower
- Sindopower / Semikron
- Semikron Danfoss Elektronik
- semicron
- SMK
- SMK CORP
- Semikron Passive
- SEMIKRON/PRIMO
- Mikron Manufacturing