공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2020-06-25
Lifecycle StatusProduction (Last Updated: 1 month ago)
설명
유통업체에서 제공한 ROHM RGS30TSX2HRC11에 대한 설명입니다.
Trans IGBT Chip N-CH 1200V 30A 267W 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
IGBT, 1.2KV, 30A, 267W, TO-247N; Available until stocks are exhausted
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247
Transistor IGBT 1200V 15A 3-Pin TO-247N Tube
晶体管, IGBT, 1.2KV, 30A, 267W, TO-247N;
IGBT TRENCH FLD 1200V 30A TO247N
IGBT TRENCH FS 1200V 30A TO-247N
Igbt, Single, 1.2Kv, 30A, To-247N; Continuous Collector Current:30A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:267W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Rohm RGS30TSX2HRC11
제조업체 별칭
ROHM에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. ROHM는 다음 이름으로도 알려져 있습니다:
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
기술 사양
Physical
Contact PlatingTin
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current30 A
Max Collector Current30 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation267 W
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation267 W
Turn-Off Delay Time70 ns
Turn-On Delay Time30 ns
Dimensions
Height25.5 mm