설명
유통업체에서 제공한 ROHM RE1E002SPTCL에 대한 설명입니다.
P-Channel 30 V 250 mA 1.4 Ohm 150 mW Surface Mount Small Signal MOSFET - SOT-416
Trans MOSFET P-CH 30V 0.25A Automotive 3-Pin EMTF T/R
Small Signal Field-Effect Transistor, 0.25A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
ROHM PMOS RE1E002SP, Vds=30 V, 250 mA, SC-75, , 3
MOSFET, P-CH, -30V, -0.25A, SC-89-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -250mA; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.9ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 150mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
제조업체 별칭
ROHM에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. ROHM는 다음 이름으로도 알려져 있습니다:
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
기술 사양
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)250 mA
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)-30 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance30 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation150 mW
Rds On Max1.4 Ω
Turn-Off Delay Time20 ns
Turn-On Delay Time4 ns
Dimensions
Height850 µm