가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CoreStaff | ST37933210 | 585 | 1 | 22m | ||||||||
| Future Electronics | 2SD1664T100Q | 0 | 1K | Tape & Reel | ||||||||
| Farnell | 2SD1664T100Q | 0 | 1 | 7h | ||||||||
| Microchip USA | 2SD1664T100Q | 1,940 | 3K | Tray | 7d | |||||||
| Win Source | WS-2SD1664T100Q | 160,800 | 660 | 7h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2012-08-15
LTD Date2012-08-15
관련 부품
Diodes Inc.2DD1766P-13
Small Signal Bipolar Transistor, 0.002A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc.2DD1664R-13
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon
ROHM2SD1766T100R
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
onsemiKSD1621RTF
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 100 @ 100mA 2V 100nA ICBO 500mW 150MHz
onsemiKSC2883YTF
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 160 @ 500mA 2V 1.5A 1W 120MHz
설명
유통업체에서 제공한 ROHM 2SD1664T100Q에 대한 설명입니다.
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
2SD1664 Series 32 V 1 A SMT NPN Medium Power Transistor - MPT-3
Trans GP BJT NPN 32V 1A 4-Pin(3+Tab) MPT T/R
TRANSISTOR SOT-89;BCE NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:500mW; DC Collector Current:500mA; DC Current Gain hFE:82; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:400mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:120; Package / Case:SOT-89; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Power Bipolar
TRANSISTOR SOT-89;BCE NPN; Transistor Type:Medium Power; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:32V; Current Ic Continuous a Max:500mA; Voltage, Vce Sat Max:400mV; Power Dissipation:500mW; Min Hfe:120; ft, ;RoHS Compliant: Yes
제조업체 별칭
ROHM에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. ROHM는 다음 이름으로도 알려져 있습니다:
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
기술 사양
Physical
Case/PackageSOT-89
Contact PlatingCopper, Tin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage32 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)32 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min120
Max Breakdown Voltage32 V
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation2 W
TerminationSMD/SMT
Transition Frequency150 MHz
Voltage Rating (DC)32 V