관련 부품
ROHMDTC124TMT2L
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 ROHM 2SCR523MT2L에 대한 설명입니다.
Bipolar Transistors - BJT NPN General Purpose Amplification Transistor
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 50V 0.1A 3-Pin SOT-723 T/R
Transistor, Npn, 50V, 0.1A, Sot-723; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:50V; Transition Frequency Ft:350Mhz; Power Dissipation Pd:150Mw; Dc Collector Current:100Ma; Dc Current Gain Hfe:120Hfe; Transistor Caserohs Compliant: Yes |Rohm 2SCR523MT2L
제조업체 별칭
ROHM에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. ROHM는 다음 이름으로도 알려져 있습니다:
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
기술 사양
Physical
Case/PackageSOT-723
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage100 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product350 MHz
hFE Min120
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation100 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation150 mW
Transition Frequency350 MHz
Dimensions
Height550 µm