공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-06-26
Lifecycle StatusEOL (Last Updated: 3 weeks ago)
LTB Date2027-09-30
LTD Date2028-03-31
관련 부품
ToshibaRN1412(TE85L,F)
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
PanasonicDSC200200L
SC,SMALL SIGNAL BIPOLAR TRANSISTOR / NPN SINGLE, GENERAL PURPOSE, VCEO:50V, IC:500MA
ROHMDTC125TKAT146
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 ROHM 2SC5866TLR에 대한 설명입니다.
NPN Transistor 500mV@100mA 1A 500mW 6V 1μA 60V 60V 2A TSMT-3 SMD 2.9mm × 1.6mm × 850μm
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 60V 2A 500mW 3-Pin TSMT T/R
Bipolar Transistors - BJT NPN 60V 2A
제조업체 별칭
ROHM에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. ROHM는 다음 이름으로도 알려져 있습니다:
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
기술 사양
Physical
Case/PackageTO-236-3
Contact PlatingCopper, Silver, Tin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current2 A
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Gain Bandwidth Product200 MHz
hFE Min180
Max Breakdown Voltage60 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Transition Frequency200 MHz
Voltage Rating (DC)60 V