공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-09-30
LTD Date2017-03-31
관련 부품
InfineonIPP50N10S3L16AKSA1
100V, N-Ch, 15.7 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T, PG-TO220-3, RoHS
Diodes Inc.DMNH10H028SCT
Single N-Channel 100 V 2.8 W 31.9 nC Silicon Through Hole Mosfet - TO-220-3
설명
유통업체에서 제공한 Rochester Electronics IPP47N10SL26AKSA1에 대한 설명입니다.
Transistor MOSFET N-Channel 100V 47A 3-Pin TO-220
MOSFET N-CH 100V 47A TO220-3
Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP47N10 120V-300V N-CHANNEL AUTOMOTIVE;
제조업체 별칭
Rochester Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Rochester Electronics는 다음 이름으로도 알려져 있습니다:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)47 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.5 nF
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Max Power Dissipation175 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation175 W
Rds On Max26 mΩ
Rise Time100 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time50 ns