설명
유통업체에서 제공한 Rochester Electronics FDN336P에 대한 설명입니다.
Trans MOSFET P-CH 20V 1.3A 3-Pin SuperSOT T/R
MOSFET, P, SMD, 3-SUPERSOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.
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Rochester Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Rochester Electronics는 다음 이름으로도 알려져 있습니다:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONICS INC
- ROCHESTER ELECTRONIC
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
기술 사양
Physical
Number of Pins3
Technical
Continuous Drain Current (ID)1.2 A
Current Rating-1.3 A
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vds)-20 V
Power Dissipation500 mW
Voltage Rating (DC)-20 V