공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-08-02
Lifecycle StatusObsolete (Last Updated: 2 months ago)
설명
유통업체에서 제공한 Rochester Electronics BLA1011-200에 대한 설명입니다.
Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Avionics LDMOS Transistor N-Channel 75V 2-Pin SOT-502A
L BAND Si N-CHANNEL RF POWER MOSFET
RF MOSFET LDMOS 36V SOT502A
OXIDE SEMICONDUCTOR FET
BULK TNS-MICP <AZ
BLA1011-200 NXP
제조업체 별칭
Rochester Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Rochester Electronics는 다음 이름으로도 알려져 있습니다:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
기술 사양
Physical
Body MaterialCeramic
MountScrew
Number of Pins3
Number of Terminals2
Technical
Current Rating10 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Frequency1.09 GHz
Gain13 dB
Gate to Source Voltage (Vgs)22 V
Max Operating Temperature200 °C
Max Power Dissipation700 W
Min Breakdown Voltage75 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power200 W
PackagingBulk
Power Dissipation700 W
Rise Time50 ns
Voltage Rating (DC)75 V