공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
ROHMDTA043EEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMDTA023EEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMDTA023YEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
설명
유통업체에서 제공한 Rochester Electronics BCX52-16E6327에 대한 설명입니다.
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 60V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R
PNP TRANSISTOR 60V 1A 1W SOT89
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX52 - GENERAL PURPOSE TRANSISTOR;
제조업체 별칭
Rochester Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Rochester Electronics는 다음 이름으로도 알려져 있습니다:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
기술 사양
Physical
Case/PackageSOT-89-4
MountSurface Mount
Number of Pins4
Number of Terminals3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product125 MHz
hFE Min100
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape (CT)
PolarityPNP
Transition Frequency125 MHz
Voltage Rating (DC)-60 V