Renesas ISL2111ARTZ

NO LEAD RoHS Compliant Active Matte Tin (Sn) - annealed IC Gate Driver 4mm 114V 3.1W 4A

9ns 2 8V 50ns 14V 1.4V,2.2V Non-Inverting MOSFET,N 7.5ns 3A,4A TDFN-10(EP) 4mm*4mm*720¦Ìm

100V/4A Half Bridge Driver, Pb Free, 10Ld 4x4 TDFN, TTL Inpu

100V, 3A/4A Peak, High Frequency Half-Bridge Drivers; DFN10, DFN12, DFN8, SOIC8; Temp Range: -40° to 125°C

MOSFET DRVR 100V 4A 2-OUT Hi/Lo Side Half Brdg Non-Inv 10-Pin TDFN EP

GATE DRIVER, MOSFET, 2-CH, TDFN-10;

Ic,Dual Mosfet Driver,Llcc,10Pin,Plastic

IC GATE DRVR HALF-BRIDGE 10TDFN

HaBr FETDr 3.0A 100V TDFN12 SMD

IC MSFT DVR HALF-BRG 100V 10TDFN

The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2111, like those of the ISL2110, can now safely swing to the VDD supply rail.