공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-10-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2021-10-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiMCH6445-TL-W
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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설명
유통업체에서 제공한 onsemi VEC2415-TL-W에 대한 설명입니다.
Dual N-Channel Power MOSFET 60V, 3A, 80mΩ
Transistor MOSFET Array Dual N-CH 60V 3A 8-Pin SOT-28FL T/R
Small Signal Field-Effect Transistor, 3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL N-CH, 60V, 3A, VEC-8
Nch+Nch 4V Drive Series Rohs Compliant: Yes
MOSFET, DUAL N-CH, 60V, 3A, VEC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.6V; Power Dissipation Pd: 900mW; Transistor Case Style: VEC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSMD/SMT
Contact PlatingTin Bismuth
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance505 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage60 V
Number of Channels2
Number of Elements2
Power Dissipation900 mW
Rds On Max80 mΩ
Schedule B8541290080
Threshold Voltage2.6 V
Turn-Off Delay Time41 ns
Turn-On Delay Time7.3 ns
Dimensions
Height800 µm