가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | SSR1N60BTM | 16,445 | 1611 | |||||||||
| Rochester Electronics | SSR1N60BTM | 28,671 | 6h | |||||||||
| Microchip USA | SSR1N60BTM | 1,487 | 600 | Tray | 23h | |||||||
| Win Source | WS-SSR1N60BTM | 98,882 | 180 | 7h | ||||||||
| Worldway Electronics | SSR1N60BTM | 29,165 | 7 | Bulk | 6h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
관련 부품
InfineonIPD60R3K3C6ATMA1
MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R
InfineonIPD50R2K0CEBTMA1
Power Field-Effect Transistor, 2.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 onsemi SSR1N60BTM에 대한 설명입니다.
MOSFET N-CH 600V 0.9A DPAK
Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFETs N-Ch/600V/0.9a/12Ohm
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)900 mA
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance12 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance215 pF
Max Operating Temperature150 °C
Max Power Dissipation28 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max12 Ω
Rise Time45 ns
Turn-Off Delay Time25 ns