공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
onsemiSGS6N60UFDTU
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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설명
유통업체에서 제공한 onsemi SGP6N60UFDTU에 대한 설명입니다.
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.6V @ 15V 3A 6A 30W 52ns
IGBT 600V 6A 30W TO220
Discrete, High Performance IGBT with Diode
IGBT 600V 6A TO-220-3
IGBTs Dis,High Perf IGBT
MISCELLANEOUS MOSFETS;
N-CHANNEL IGBT
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)600 V
Current Rating3 A
Element ConfigurationSingle
Fall Time280 ns
Max Collector Current6 A
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Reverse Recovery Time35 ns
Voltage Rating (DC)600 V