공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-09-23
LTD Date2011-03-23
관련 부품
onsemiFGP15N60UNDF
Trans IGBT Chip N-CH 600V 30A 178000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 30A 178W TO220-3
STMicroelectronicsSTGF15H60DF
STGF15Hxx Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
설명
유통업체에서 제공한 onsemi SGP40N60UFTU에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 40A 3-Pin (3+Tab) TO-220 Rail
IGBT 600V 40A 160W TO220 / IGBT 600 V 40 A 160 W Through Hole TO-220-3
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT 600V 40A 160W TO220
IGBT 600V 40A TO-220-3
IGBTs Dis,High Perf IGBT
MISCELLANEOUS MOSFETS;
N-CHANNEL IGBT
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)600 V
Current Rating20 A
Element ConfigurationSingle
Fall Time280 ns
Max Collector Current40 A
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation160 W
Voltage Rating (DC)600 V