관련 부품
onsemiSGS5N60RUFDTU
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
onsemiSGS6N60UFDTU
Res Thick Film 0402 6.49K Ohm 1% 0.063W(1/16W) ±100ppm/C Pad SMD Automotive T/R
설명
유통업체에서 제공한 onsemi SGP13N60UFTU에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail
Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 6.5A 13A 60W 20ns/70ns
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, TO-220; DC Collector Current: 13A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
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기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)600 V
Current Rating6.5 A
Element ConfigurationSingle
Fall Time280 ns
Max Collector Current13 A
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation60 W
Voltage Rating (DC)600 V