공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi RFD14N05SM9A에 대한 설명입니다.
N-Channel Power MOSFET 50V, 14A, 100mΩ
Power MOSFET, N Channel, 50 V, 14 A, 0.1 ohm, TO-252AA, Surface Mount
Trans MOSFET N-CH Si 50V 14A 3-Pin(2+Tab) DPAK T/R
50V 14A 100m´Î@10V14A 48W 4V@250Ã×A N Channel TO-252AA MOSFETs ROHS
Fet 50V 100.0 Mohm Dpak Rohs Compliant: Yes
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Transistor; Transistor POLARITY
IC,RFD14N05SM9A,ADDED FOR DPP( INTERSIL) PKG ID CHANGE<AZ
onsemi NMOS, Vds=50 V, 14 A, DPAK (TO-252), , 3
POWER FIELD-EFFECT TRANSISTOR, 1
PWR MOS TAPE AND REEL RFD14N05SM
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance570 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation48 W
Rds On Max100 mΩ
Resistance100 mΩ
Rise Time26 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)50 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책