가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NVBLS001N06C | 1,744 | 47 | |||||||||
| Rochester Electronics | NVBLS001N06C | 1,744 | 6h | |||||||||
| DigiKey | 488-NVBLS001N06CCT-ND | 2,490 | 1 | Cut Tape | ||||||||
| Farnell | NVBLS001N06C | 360 | 1 | Cut Tape | 4h | |||||||
| element14 APAC | NVBLS001N06C | 360 | 1 | Cut Tape | 27m |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-12-19
Lifecycle StatusNRND (Last Updated: 5 days ago)
LTB Date2024-04-02
LTD Date2024-10-02
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 days ago)
설명
유통업체에서 제공한 onsemi NVBLS001N06C에 대한 설명입니다.
Mosfet, N-Ch, 60V, 422A, 175Deg C, 284W Rohs Compliant: Yes |Onsemi NVBLS001N06C
MOSFET, N-CH, 60V, 422A, 175DEG C, 284W; Available until stocks are exhausted
4.2W(Ta),284W(Tc) 20V 4V@ 562¦ÌA 143nC@ 10V 1N 60V 900¦Ì¦¸@ 80A,10V 11.575nF@30V HPSOF-8
Trans MOSFET N-CH 60V 51A Automotive 9-Pin(8+Tab) TO-LL T/R
Power Field-Effect Transistor, 422A I(D), 60V, 0.0009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, N沟道, 60V, 422A, 175度 C, 284W;
MOSFET N-CH 60V 51A/422A 8HPSOF
60V 422A 0.75m´Î@10V80A 284W 2.8V@562Ã×A 76pF@30V N Channel 11.575nF@30V 143nC@10V -55¡Í~+175¡Í@(Tj) H-PSOF8L MOSFETs ROHS
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Number of Terminals2
Technical
Continuous Drain Current (ID)422 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance900 µΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation284 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation4.2 W
Schedule B8541290080
Turn-Off Delay Time119 ns
Turn-On Delay Time34 ns
Dimensions
Height2.4 mm