가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTMS4706NR2G | 208,278 | 1304 | |||||||||
| Rochester Electronics | NTMS4706NR2G | 272,058 | 1d | |||||||||
| Microchip USA | NTMS4706NR2G | 302 | 3500 | Tray | 17h | |||||||
| Win Source | WS-NTMS4706NR2G | 11,900 | 20 | 1h | ||||||||
| Worldway Electronics | NTMS4706NR2G | 23,984 | 7 | Tape & Reel | 1d |
데이터시트 및 문서
onsemi NTMS4706NR2G에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
공식 데이터시트8년 전
공급망
Lifecycle StatusObsolete (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
onsemiNTMS4705NR2G
Power MOSFET 30 V, 12 A, Single N-Channel SO-8 - for new designs use (NTMS4801N or NTMS4816N)
Diodes Inc.DMN3018SSD-13
Dual N-Channel 30 V 30 mOhm 6 nC 1.5 W Silicon Surface Mount Mosfet - SOIC-8
설명
유통업체에서 제공한 onsemi NTMS4706NR2G에 대한 설명입니다.
Power MOSFET 30 V, 10.3 A, Single N-Channel, SO-8 - for new designs use (NTMS4816N)
Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R
6400 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET
Small Signal Field-Effect Transistor, 6.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs- Power and Small Signal 30V 10.3A N-Channel
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 6.4A Ta 6.4A 1.5W 4ns
IC MCU 32BIT 1MB FLASH 169LFBGA
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.4 A
Current Rating8.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance950 pF
Max Operating Temperature150 °C
Max Power Dissipation830 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1.5 W
Rds On Max12 mΩ
Rise Time4 ns
Turn-Off Delay Time24 ns
Voltage Rating (DC)30 V