가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTMFS5C410NLT1G | 647 | 203 | |||||||||
| Rochester Electronics | NTMFS5C410NLT1G | 21,647 | 19h | |||||||||
| DigiKey | 488-NTMFS5C410NLT1GCT-ND | 3,967 | 1 | Cut Tape | ||||||||
| Newark | NTMFS5C410NLT1G | 0 | 1500 | Tape & Reel | ||||||||
| Onlinecomponents.com | NTMFS5C410NLT1G | 0 | 375 | Bulk |
공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-06-09
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
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Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 onsemi NTMFS5C410NLT1G에 대한 설명입니다.
Single N Channel Power Mosfet 40V, 330A, 0.82M/Reel Rohs Compliant: Yes |Onsemi NTMFS5C410NLT1G
Single N−Channel Power MOSFET 40V, 330A, 0.82mΩ
NTMFS Series 40 V 0.82 mOhm 3.2 W Surface Mount N-Channel Power Mosfet - DFN-5
Trans MOSFET N-CH 40V 46A 5-Pin(4+Tab) SO-FL T/R
MOSFET NFET SO8FL 40V 312A 900MO
MOSFET N-CH 40V 46A SO8FL / Power MOSFET
Power Field-Effect Transistor, 330A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
3.2W(Ta),139W(Tc) 20V 2V@ 250¦ÌA 143nC@ 10 V 1N 40V 900¦Ì¦¸@ 50A,10V 46A,302A 8.862nF@25V SO-8FL 4.9mm*5.9mm*1.05mm
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)330 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.2 mΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.862 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation139 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation3.2 W
Rds On Max900 µΩ
Turn-Off Delay Time66 ns
Turn-On Delay Time20 ns
Dimensions
Height1.1 mm