공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-25
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2013-01-11
LTD Date2013-07-11
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
onsemiNTMFS4836NT1G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11A Ta 90A Tc 90A 2.25W 12ns
InfineonIRFH7934TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
onsemiNTMFS4837NT1G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 10A Ta 74A Tc 74A 2.2W 10ns
NexperiaBUK9M6R6-30EX
Power MOSFET, N Channel, 30 V, 70 A, 5.3 Milliohms, LFPAK33, 8 Pins, Surface Mount
설명
유통업체에서 제공한 onsemi NTMFS4847NAT1G에 대한 설명입니다.
NTMFS4847N: Power MOSFET 30V 85A 4.1 mOhm Single N-Channel SO-8FL
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.5A Ta 85A Tc 85A 48.1W 8.7ns
Trans MOSFET N-CH 30V 18A 5-Pin SO-FL EP T/R
Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 11.5A/85A 5DFN
NTMFS4847NAT1G, SINGLE MOSFETS;
880mW(Ta)，48.4W(Tc) 16V 2.5V@ 250µA 28nC@ 4.5V 1individualNChannel 30V 4.1mΩ@ 30A,10V 85A 2.614pF@12V SO-FL-8 SMD mount 4.9mm*5.9mm*1.05mm
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins5
Number of Terminals5
Technical
Continuous Drain Current (ID)11.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.2 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8.7 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.614 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation880 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation880 mW
Rds On Max4.1 mΩ
Rise Time53 ns
Turn-Off Delay Time21 ns
Turn-On Delay Time17.7 ns
Dimensions
Height1.1 mm