공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-01
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2010-10-14
LTD Date2011-04-14
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
설명
유통업체에서 제공한 onsemi NTLJS1102PTBG에 대한 설명입니다.
Power MOSFET 8V 8.1A 36 mOhm Single P-Channel WDFN2x2
Small Signal Field-Effect Transistor, 3.7A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET P-CH 8V 3.7A 6-WDFN
RES SMD 470 OHM 1% 1/4W 1206
SMALL SIGNAL FET
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:8.1A; Drain Source Voltage, Vds:-8V; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-720mV; Power Dissipation, Pd:3.3W ;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)3.7 A
Drain to Source Breakdown Voltage-8 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vds)8 V
Fall Time70 ns
Gate to Source Voltage (Vgs)6 V
Input Capacitance1.585 nF
Max Operating Temperature150 °C
Max Power Dissipation3.3 W
Min Breakdown Voltage8 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation3.3 W
Rds On Max36 mΩ
Resistance36 mΩ
Rise Time41 ns
Turn-Off Delay Time80 ns