가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | NTJD4401NT1GOSDKR-ND | 40,135 | 1 | Custom Reel | ||||||||
| Avnet | NTJD4401NT1G | 3,212,000 | 3K | 13h | ||||||||
| Future Electronics | NTJD4401NT1G | 261,000 | 3K | Tape & Reel | ||||||||
| Newark | NTJD4401NT1G | 594 | 5 | |||||||||
| Master Electronics | NTJD4401NT1G | 17,750 | 3K |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-08-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiNTJD4105CT1G
NTJD4105C: Small Signal MOSFET 20V 775mA 220 mOhm Dual Complementary SC-88/SC70-6/SOT-363
설명
유통업체에서 제공한 onsemi NTJD4401NT1G에 대한 설명입니다.
Dual N-Channel Small Signal MOSFET with ESD Protection 20V 630mA 375mΩ
MOSFET, DUAL N-CH, VDSS 27V, RDS(ON) 0.29OHM, ID 0.63A, SC-88/SOT-363,PD 0.55W, GFS 2S
MOSFET 2N-CH 20V 0.63A SOT-363 / Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R
Dual N-Channel 20 V 220 mOhm 270 mW Surface Mount Small Signal MOSFET SOT-363
MOSFET TRANSISTOR; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 920mV; Power Dis
Mosfet, Dual N Channel, 20V, 0.63A, Sot-363-6; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:910Ma; No. Of Pins:6Pins; Product Range:-Rohs Compliant: Yes |Onsemi NTJD4401NT1G.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-363-6
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)630 mA
Current Rating630 mA
Drain to Source Breakdown Voltage27 V
Drain to Source Resistance375 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time227 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance46 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation550 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs920 mV
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation550 mW
Rds On Max375 mΩ
Resistance220 mΩ
Rise Time227 ns
Schedule B8541210080
Threshold Voltage920 mV
Turn-Off Delay Time786 ns
Turn-On Delay Time83 ns
Voltage Rating (DC)20 V
Dimensions
Height1.1 mm
Length2.1844 mm
Width1.3462 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책