가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTHD4N02FT1 | 12,000 | 1304 | |||||||||
| Rochester Electronics | NTHD4N02FT1 | 12,000 | 13h | |||||||||
| Microchip USA | NTHD4N02FT1 | 224 | 3500 | Tray | 3d | |||||||
| Win Source | WS-NTHD4N02FT1 | 18,000 | 205 | 14h | ||||||||
| Worldway Electronics | NTHD4N02FT1 | 28,130 | 7 | Tape & Reel | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-09-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2008-06-30
LTD Date2008-12-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
VishaySI5935CDC-T1-E3
1.3W 8V 1V@ 250¦ÌA 11nC@ 5V 2P 20V 100m¦¸@ 3.1A,4.5V 4A 455pF@10V CHIPFET-8 3.05mm*1.65mm*1.1mm
설명
유통업체에서 제공한 onsemi NTHD4N02FT1에 대한 설명입니다.
Power MOSFET 20V 3.9A 80 mOhm Dual N-Channel ChipFET FETKY
MOSFETs- Power and Small Signal 20V 3.9A N-Channel No-Cancel/No-Return
Trans MOSFET N-CH 20V 2.9A 8-Pin Chip FET T/R
Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 2.9A Tj 2.9A 910mW 9ns
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.9 A
Current Rating2.7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time9 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance300 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation910 mW
Rds On Max80 mΩ
Rise Time9 ns
Turn-Off Delay Time10 ns
Voltage Rating (DC)20 V