가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTGS3441BT1G | 30,000 | 2738 | |||||||||
| Rochester Electronics | NTGS3441BT1G | 48,750 | 8h | |||||||||
| HQonline | DS0094073 | 39,000 | 100 | >1w | ||||||||
| Microchip USA | NTGS3441BT1G | 275 | 3500 | Tray | 6d | |||||||
| Win Source | WS-NTGS3441BT1G | 49,500 | 305 | 9h |
공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-28
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2009-09-30
LTD Date2010-03-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
VishaySI3460DDV-T1-GE3
Transistor: N-MOSFET; unipolar; 20V; 7.9A; 0.028ohm; 2.7W; -55+150 deg.C; SMD; TSOP6
설명
유통업체에서 제공한 onsemi NTGS3441BT1G에 대한 설명입니다.
Power MOSFET 20V 2.35A 90 mOhm Single P-Channel TSOP-6
Trans MOSFET P-CH 20V 3A 6-Pin TSOP T/R
2200 mA 20 V P-CHANNEL Si SMALL SIGNAL MOSFET
Tape & Reel (TR) Surface Mount P-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 2.2A Ta 2.2A 1.1W 6ns
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTSOP
Contact PlatingTin
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time6 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance630 pF
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Operating Temperature-55 °C
PackagingTape & Reel (TR)
Power Dissipation1.1 W
Rds On Max90 mΩ
Rise Time6 ns
Turn-Off Delay Time40 ns