데이터시트 및 문서
onsemi NTGD4167CT1G에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
공식 데이터시트4년 전
공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-03
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
VishaySI3585CDV-T1-GE3
Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R / MOSFET N/P-CH 20V 3.9A 6TSOP
설명
유통업체에서 제공한 onsemi NTGD4167CT1G에 대한 설명입니다.
NTGD4167C: Small Signal MOSFET 30V 2.6A 90 mOhm Dual Complementary TSOP-6
NTGD4167CT1G N/P-channel MOSFET Transistor; 2.2 A; 2.9 A; 30 V; 6-Pin TSOP
Dual Channel N & P 30 V 90 mOhm 900 mW Surface Mount Power Mosfet - TSOP-6
Complementary Power MOSFET 30V, 2.6A, 90mΩ
onsemi digital transistor, TSOPencapsulation, SMD mount
Power Field-Effect Transistor, 2.6A I(D), 30V, 0.09ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N AND P CH, 30V, 2.6A, TSOP-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Power Dissipation Pd: 900mW; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
제조업체 별칭
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- ON Semiconductor
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- SCG
- ON Semiconductor Cor
- ON SEMICO
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- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
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- ON Semi - ON Semiconductor
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- ON Semiconductor Inc.
- onsemiconductor
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기술 사양
Physical
Case/PackageTSOP
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance295 pF
Max Operating Temperature150 °C
Max Power Dissipation900 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
Power Dissipation1.1 W
Rds On Max90 mΩ
Resistance90 MΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage900 mV
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Dimensions
Height1 mm
Length3.1 mm
Width1.7 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책