공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-05-16
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2010-01-01
LTD Date2010-07-01
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
설명
유통업체에서 제공한 onsemi NTGD3147FT1G에 대한 설명입니다.
Power MOSFET, -20V -2.5A P-Ch with Schottky Barrier Diode, TSOP-6
MOSFET P-CH 20V 2.2A 6-TSOP
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:2.5A; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):145mohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-0.95V; Power Dissipation, Pd:1W ;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTSOP
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance145 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationSingle
Fall Time6.2 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage20 V
Min Operating Temperature-25 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1 W
Rds On Max145 mΩ
Rise Time6.2 ns
Turn-Off Delay Time14.5 ns