공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-12-31
LTD Date2009-06-30
관련 부품
onsemiNTD70N03R-001
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 32A Tc 32A 1.87W 1.3ns
onsemiNTD65N03R-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9.5A Ta 32A Tc 32A 50W 20.3ns
onsemiNTD4809NA-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9.6A Ta 58A Tc 11.5A 2W 2.3ns
설명
유통업체에서 제공한 onsemi NTD60N02R-35G에 대한 설명입니다.
Tube Through Hole N-Channel Single Mosfet Transistor 8.5A Ta 32A Tc 32A 1.87W 33ns
MOSFET N-CH 25V 8.5A/32A IPAK / N-Channel 25 V 8.5A (Ta), 32A (Tc) 1.25W (Ta), 58W (Tc) Through Hole I-Pak
Trans MOSFET N-CH 25V 32A 3-Pin(3+Tab) IPAK Rail
MOSFETs- Power and Small Signal 25V 62A N-Channel
Power Field-Effect Transistor, 32A I(D), 25V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NTD60N02R-35G, SINGLE MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)32 A
Current Rating62 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.33 nF
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.87 W
Rds On Max10.5 mΩ
Rise Time33 ns
Turn-Off Delay Time19 ns
Voltage Rating (DC)25 V