공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2009-06-30
LTD Date2009-12-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
onsemiNTD65N03R-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9.5A Ta 32A Tc 32A 50W 20.3ns
onsemiNTD4865N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 8.5A Ta 44A Tc 44A 1.92W 19ns
onsemiNTD4865N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 8.5A Ta 44A Tc 44A 1.92W 19ns
설명
유통업체에서 제공한 onsemi NTD50N03R-35G에 대한 설명입니다.
Tube Through Hole N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 4ns
Power MOSFET 25 V, 45 A, Single N-Channel, DPAK
Trans MOSFET N-CH 25V 9.2A 3-Pin(3+Tab) IPAK Tube
7.8 A 25 V 0.014 ohm N-CHANNEL Si POWER MOSFET
MOSFETs- Power and Small Signal 25V 45A N-Channel
Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, 25V, I-PAK; Transistor type:Enhancement; Voltage, Vds typ:25V; Current, Id cont:45A; Resistance, Rds on:0.0117R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:1.7V; Case style:I-PAK; Power, Pd:50W; Transistor RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7.8 A
Current Rating45 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance750 pF
Max Operating Temperature175 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max12 mΩ
Rise Time84 ns
Turn-Off Delay Time15 ns
Voltage Rating (DC)25 V