공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-17
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2011-01-06
LTD Date2011-07-02
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
onsemiNTD85N02R-001
Tube Through Hole N-Channel Single Mosfet Transistor 12A Ta 85A Tc 85A 2.4W 12ns
onsemiNTD4855N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 14A Ta 98A Tc 17.7A 2.24W 4.35ns
onsemiNTD4855N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 14A Ta 98A Tc 17.7A 2.24W 4.35ns
설명
유통업체에서 제공한 onsemi NTD4857N-1G에 대한 설명입니다.
Tube Through Hole N-Channel Single Mosfet Transistor 12A Ta 78A Tc 14.6A 2.1W 3.6ns
Power MOSFET 25V 78A 5.7 mOhm Single N Channel DPAK
Trans MOSFET N-CH 25V 15A 3-Pin(3+Tab) IPAK Tube
Power MOSFET 25V 76A Single N-Channel
Power Field-Effect Transistor, 12A I(D), 25V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time3.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.96 nF
Max Operating Temperature175 °C
Max Power Dissipation56.6 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.1 W
Rds On Max5.7 mΩ
Rise Time18.7 ns
Turn-Off Delay Time26 ns