공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-12-15
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2010-01-01
LTD Date2010-07-01
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
onsemiNTD4865N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 8.5A Ta 44A Tc 44A 1.92W 19ns
onsemiNTD4865N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 8.5A Ta 44A Tc 44A 1.92W 19ns
onsemiNTD60N02R-1G
Tube Through Hole N-Channel Single Mosfet Transistor 8.5A Ta 32A Tc 32A 1.87W 33ns
설명
유통업체에서 제공한 onsemi NTD4815NH-1G에 대한 설명입니다.
Tube Through Hole N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 35A 1.92W 17.6ns
Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK
MOSFET N-CH 30V 6.9A IPAK / Trans MOSFET N-CH 30V 8.5A 3-Pin(3+Tab) IPAK Tube
MOSFET, N, 30V, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipat
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)6.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time17.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance845 pF
Max Operating Temperature175 °C
Max Power Dissipation32.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max15 mΩ
Rise Time17.6 ns
Turn-Off Delay Time18.4 ns