공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
onsemiNTD4809NA-35G
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 9.6A Ta 58A Tc 11.5A 2W 30V
onsemiNTD4810N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 9A Ta 54A Tc 54A 2W 2.6ns
설명
유통업체에서 제공한 onsemi NTD20N03L27-1G에 대한 설명입니다.
NTD20N03L27: Power MOSFET 30V 20A 27 mOhm Single N-Channel DPAK Logic Level
Tube Through Hole N-Channel Single Mosfet Transistor 20A Ta 20A 74W 31ns
Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) IPAK Rail
20 A 30 V 0.031 ohm N-CHANNEL Si POWER MOSFET
MOSFETs- Power and Small Signal 30V 20A N-Channel
Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NTD20N03L27-1G, SINGLE MOSFETS;
N CHANNEL MOSFET, 20V, 20A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.6V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.26 nF
Max Operating Temperature150 °C
Max Power Dissipation1.75 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Elements1
Power Dissipation74 W
Rds On Max27 mΩ
Rise Time137 ns
Turn-Off Delay Time38 ns
Voltage Rating (DC)30 V