공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-08-09
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi NTBG080N120SC1에 대한 설명입니다.
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 30 A, 1.2 kV, 0.08 ohm, TO-263HV (D2PAK)
onsemi NChannelMOSTube, Vds=1200 V, 30 A, D2PAK £¨TO-263£©encapsulation, surface mount, 7Pin
Single N-Channel 1200 V 30 A 179 W Surface Mount SiC Power Mosfet - D2PAK-7L
Trans MOSFET N-CH SiC 1.2KV 56.4A 8-Pin(7+Tab) D2PAK T/R
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
1.2kV 30A 80m´Î@20V20A 179W 3V@5mA 7.9pF@800V N Channel 1.154nF@800V 56nC@-5~20V -55¡Í~+175¡Í@(Tj) D2PAK-7L MOSFETs ROHS
Power Field-Effect Transistor, 30A I(D), 1200V, 0.11ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263CB
SIC MOSFET, N-CH, 20V, 30A, TO-263HV; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:1.2kV; No. of Pins:7Pins; Rds(on) Test Voltage:20V; Power Dissip
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageD2PAK
Number of Terminals7
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage1.2 kV
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)1.2 kV
Gate to Source Voltage (Vgs)25 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation179 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation179 W
Turn-Off Delay Time21 ns
Turn-On Delay Time12 ns
Dimensions
Height4.9 mm