TRANSISTOR, NPN, 60V, 2A, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 540mW; DC Collector Current: 2A; DC Current Gain hFE: 100hFE; Transi
Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important.