공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
설명
유통업체에서 제공한 onsemi NSS60201LT1G에 대한 설명입니다.
Trans GP BJT NPN 60V 2A 540mW Automotive 3-Pin SOT-23 T/R / TRANS NPN 60V 2A SOT-23
NSS Series 60 V 2 A Surface Mount Low Vce PNP Transistor - SOT-23
Low VCE(sat) Transistor, NPN, 60 V, 2.0 A, SOT-23 Package
60V 460mW 100@2.0A,2.0V 2A NPN SOT-23 Bipolar (BJT) ROHS
60V 460mW 150@1A,2V 2A NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, Plastic/Epoxy, 3 Pin
Transistor, Npn, 60V, 2A, Sot-23-3; |Onsemi NSS60201LT1G
onsemi NPN Digital Transistor, SOT-23 SMD, Vceo=60V DC
TRANSISTOR, NPN, 60V, 2A, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 540mW; DC Collector Current: 2A; DC Current Gain hFE: 100hFE; Transi
Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)140 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage140 mV
Collector Emitter Voltage (VCEO)60 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)8 V
Fall Time120 ns
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min100
Max Breakdown Voltage60 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation710 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation540 mW
Rise Time100 ns
Schedule B8541210080
Transition Frequency100 MHz
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책