공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-24
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
Toshiba2SA1162-GR(TE85L,F
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMBC807-25T116
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
설명
유통업체에서 제공한 onsemi NSS60200LT1G에 대한 설명입니다.
ON SEMI NSS60200LT1G PNP LOW SATURATION BIPOLAR TRANSISTOR,2 A,60V,3-PIN SOT-23
Bipolar Transistors - BJT LO V PNP TRANSISTOR 60V 4.0A
NSS60200L Series 60 V 2 A Surface Mount Low VCE PNP Transistor - SOT-23-3
Trans GP BJT PNP 60V 2A 540mW 3-Pin SOT-23 T/R
60 V, 4.0 A, LOW VCE(SAT) PNP TRANSISTOR Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
onsemi PNP Transistor, SOT-23, SMD, -2A Ic, -60V Vce
Low VCE(sat) Transistor, PNP, -60 V, 2.0 A
TRANSISTOR, PNP, -60V, -2A, SOT-23-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 540mW; DC Collector Current: -2A; DC Current Gain hFE: 100hFE; Tr
Bipolar Transistor, Pnp -60V Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:60V; Continuous Collector Current:4A; Power Dissipation:540Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi NSS60200LT1G.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage270 mV
Collector Emitter Voltage (VCEO)60 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Fall Time130 ns
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min100
Max Breakdown Voltage60 V
Max Collector Current2 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation460 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation540 mW
Rise Time120 ns
Schedule B8541210080
Transition Frequency100 MHz
Dimensions
Height1.01 mm
Length3.04 mm
Width1.4 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책