공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-09
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiCPH3240-TL-E
Bipolar Transistor, (-)50V, (-)1A, Low VCE(sat), (PNP)NPN Single CPH3. ONSSPCDDENY1E7M;
onsemiSMMBTA06LT1G
Bipolar (BJT) Single Transistor, NPN, 80 V, 500 mA, 225 mW, SOT-23, Surface Mount
onsemiMMBTA06LT1G
TRANSISTOR, BIPOLAR, SI, NPN, DRIVER, VCEO 80VDC, IC 500MA, PD 225MW, SOT-23,VCBO 80VDC
Toshiba2SC3324-BL(TE85L,F
Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 onsemi NSS1C201LT1G에 대한 설명입니다.
100 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor
ON SEMI NSS1C201LT1G NPN BIPOLAR TRANSISTOR, 3 A, 100 V, 3-PIN SOT-23
Bipolar Transistors (BJT); NSS1C201LT1G; ON SEMICONDUCTOR; NPN; 3; 100 V; 3 A
NSS1C201L Series 100 V 2 A Surface Mount NPN Transistor - SOT-23
Trans GP BJT NPN 100V 3A Automotive 3-Pin SOT-23 T/R
Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:490Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:110Mhz; Dc Current Gain Hfe Min:40Hfe Rohs Compliant: Yes |Onsemi NSS1C201LT1G.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)140 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage150 mV
Collector Emitter Voltage (VCEO)100 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Gain Bandwidth Product110 MHz
hFE Min40
Max Breakdown Voltage100 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation710 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation710 mW
Schedule B8541210080
Transition Frequency110 MHz
Dimensions
Height1.11 mm
Length3.04 mm
Width2.64 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책