onsemi NSBC114EPDP6T5G

Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

NSBC114EPDP6 Series 50 V 0.1 A 339 mW NPN/PNP Bias Resistor Transistor- SOT-963

Complementary Bipolar Digital Transistor (BRT)

250mV@ 300¦ÌA,10mA 1 NPN,1 PNP - Pre-Biased (Dual) 408mW 500nA 50V 100mA SOT-963 1mm*800¦Ìm*370¦Ìm

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Brt Transistor, 50V, 10K/10Kohm, Sot-963, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBC114EPDP6T5G

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EPDP6T5G series two complementary BRT devices are housed in the SOT963 package which is ideal for low power surface mount applications where board space is at a premium.