공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-01
설명
유통업체에서 제공한 onsemi NGD15N41CLT4G에 대한 설명입니다.
N-Channel Ignition IGBT 15 A, 410 V, 2.1 V (max)
Trans IGBT Chip N-CH 440V 15A 3-Pin (2+Tab) DPAK T/R
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
SINGLE IGNITION IGBT, 410V, 15A, FULL REEL
Insulated Gate Bipolar Transistor, 20A I(C), 400V V(BR)CES, N-Channel
IGBT, N CH, 15A, 410V, DPAK; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:410V; Collector Emitter Voltage V(br)ceo:410V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:107W
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Collector Emitter Voltage (VCEO)440 V
Current Rating15 A
Element ConfigurationSingle
Fall Time15 µs
Max Breakdown Voltage440 V
Max Collector Current15 A
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation107 W
Rise Time7 µs
Turn-Off Delay Time4 µs
Turn-On Delay Time700 ns
Voltage Rating (DC)410 V
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책