onsemi NDS356AP

Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 1.1A SSOT3

-30V P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel 30 V 0.3 Ohm SMT Enhance Mode Field Effect Transistor - SSOT-3

500mW(Ta) 20V 2.5V@ 250µA 4.4nC@ 5 V 1individualPChannel 30V 200mΩ@ 1.3A,10V 1.1A 280pF@10V SOT-23-3 SMD mount 2.92mm*1.4mm*950μm

MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.6V; Power Dissipatio

MOSFET, P SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):300mohm; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23 (TO-236); Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS356AP; Tape Width:8mm; Termination Type:SMD; Voltage Vgs th Max:-2.5V

SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.