공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1996-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi NDC7003P에 대한 설명입니다.
Dual P-Channel Enhancement Mode Field Effect Transistor -60V, -0.34A, 5Ω
Trans MOSFET P-CH 60V 0.34A 6-Pin TSOT-23 T/R / MOSFET 2P-CH 60V 0.34A SSOT6
Transistor MOSFET P-Channel 60 Volt 0.34A 6-Pin SuperSOT
Dual P-Channel 60 V 5 Ohm SMT PowerTrench Mosfet - SSOT-6
DUAL P CH MOSFET, -60V, SUPER SOT-6; Tra; DUAL P CH MOSFET, -60V, SUPER SOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-340mA; Drain Source Voltage Vds, P Channel:-60V; On Resistance Rds(on), P Channel:1.2ohm; Rds(on) Test Voltage Vgs:-10V
These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)340 mA
Current Rating-220 mA
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance66 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-1.9 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation700 mW
Rds On Max5 Ω
Resistance5 Ω
Rise Time10 ns
Schedule B8541210080
Threshold Voltage-1 V
Turn-Off Delay Time8 ns
Turn-On Delay Time3.2 ns
Voltage Rating (DC)-50 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책