Transistor Polarity:p Channel; Continuous Drain Current Id:-30A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.037Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.4V; Power Dissipation Pd:75W; No. Of Pins:3Pins Rohs Compliant: Yes
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.