onsemi MUN5333DW1T1G

Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R

MUN Series 50 V 100 mA 4.7 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

80@5mA,10V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS

Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP

Complementary Bipolar Digital Transistor (BRT)

TRANS, NPN/PNP, 4.7K/47K, SOT-363-6; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.1(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.