onsemi MUN5316DW1T1G

MUN Series 50 V 100 mA 4.7 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

250mV@ 1mA,10mA 1 NPN,1 PNP - Pre-Biased (Dual) 385mW 500nA 50V 100mA SC-88-6 2mm*1.25mm*900¦Ìm

Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R

Complementary Bipolar Digital Transistor (BRT)

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Brt Transistor, 50V, 4.7Kohm, Sc88; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi MUN5316DW1T1G

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.