가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MUN5230DW1T1G | 3,000 | 3K | 1d | ||||||||
| Newark | MUN5230DW1T1G | 230 | 5 | Cut Tape | ||||||||
| Verical | MUN5230DW1T1G | 12,000 | 298 | |||||||||
| Arrow Electronics | MUN5230DW1T1G | 12,000 | 1 | |||||||||
| DigiKey | MUN5230DW1T1GOSCT-ND | 8,355 | 1 | Cut Tape |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-11-25
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiMUN5330DW1T1G
ON SEMI MUN5330DW1T1G DUAL NPN+PNP BIPOLAR TRANSISTOR,0.1 A,50V,6-PIN SOT-363
onsemiMUN5211DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm
onsemiMUN5314DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm
설명
유통업체에서 제공한 onsemi MUN5230DW1T1G에 대한 설명입니다.
ON SEMI MUN5230DW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 50 V, 6-PIN SOT-363
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
MUN Series 50V 100 mA 1 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN
BRT TRANS, NPN, 50V, SOT-363-6; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 1kohm; Base-Emitter Resistor R2: 1kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
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- ON Semiconductor
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- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
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- OSC
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- ON Semiconductor / Fairchild
- SCG
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- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
hFE Min3
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Frequency10 kHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation385 mW
Min Operating Temperature-55 °C
Number of Elements2
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation635 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책