가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MUN5214DW1T1G | 384,000 | 3K | Tape & Reel | ||||||||
| Avnet | MUN5214DW1T1G | 75,000 | 3K | 15h | ||||||||
| Newark | MUN5214DW1T1G | 239 | 1 | Cut Tape | ||||||||
| Master Electronics | MUN5214DW1T1G | 42,000 | 3K | |||||||||
| Onlinecomponents.com | MUN5214DW1T1G | 42,000 | 3K | Bulk |
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiMUN5213DW1T1G
Bipolar Transistors (BJT); MUN5213DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA
onsemiMUN5235DW1T1G
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R / TRANS 2NPN PREBIAS 0.25W SOT363
onsemiMUN5314DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm
설명
유통업체에서 제공한 onsemi MUN5214DW1T1G에 대한 설명입니다.
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 47 kohm
DUAL NPN BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
MUN Series 50 V 100 mA 10 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363
80@5mA,10V 2 NPN - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
100 mA 50 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
TRANS, 50V, 10/47KOHM, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resisto
Brt Transistor, 50V, 47K/10Kohm, Sot-363; Tensión Colector Emisor V(Br)Ceo:50V; Intensidad De Collector Continua Ic:100Ma; Resitencia Básica De Entrada R1:10Kohm; Resistor R2 Base-Emisor:47Kohm; Ratio De La Resistencia, R1/R2:0.21 |Onsemi MUN5214DW1T1G
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationDual
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation385 mW
Min Operating Temperature-55 °C
Number of Elements2
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation256 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책