onsemi MUN5111T1G

Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

R1 = 10 KILO OHM, R2 = 10 KILO OHM PNP DIGITAL TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

MUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor SOT-323

MUN5111T1G PNP DIGITAL TRANSISTOR, 100 MA 50 V 10 KOHMS, RATIO OF 1, 3-PIN SC-70

35@5mA,10V One PNP - Pre-Biased 202mW 100mA 50V 500nA SC-70-3 Digital Transistors ROHS

Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R

onsemi PNPTransistor, SOT-323 (SC-70)encapsulation, SMD mount, Maximum DC collector current-100 mA, maximum collector-emission voltage-50 V

TRANSISTOR, RF, PNP, 50V, SOT-323-3; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm;

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.